TK80F04K3L mos equivalent, silicon n-channel mos.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V.
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* Automotive Switching Voltage Regulators DC-DC Converters Motor Drivers
2. Features
(1) (2) (3) .
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