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TK80E06K3A Datasheet, Toshiba

TK80E06K3A mos equivalent, silicon n-channel mos.

TK80E06K3A Avg. rating / M : 1.0 rating-14

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TK80E06K3A Datasheet

Features and benefits

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V,.

Application


* Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.8 mΩ (typ.) Low .

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TAGS

TK80E06K3A
Silicon
N-channel
MOS
Toshiba

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