TK7S10N1Z mosfet equivalent, silicon n-channel mosfet.
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement m.
* Automotive
* Switching Voltage Regulators
* Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain.
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