TK4R3E06PL - Silicon N-channel MOSFET

Product Overview

Toshiba

Part number	TK4R3E06PL
Manufacturer	Toshiba
File Size	497.98 KB
Description	Silicon N-channel MOSFET
Datasheet	TK4R3E06PL Datasheet
Additional preview pages of the TK4R3E06PL datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 15.1 nC (typ. ) (3) Small output charge: Qoss = 39 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK4R3E06PL TO-220 1: Gate 2: Drain (heatsink) 3: Source ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production.

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Published: Aug 7, 2019 |