TK4A80E Datasheet, Toshiba

(1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10.

* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (2) Low leaka.