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TK3R3E03GL - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID =0.5 mA) 3. Packaging and Internal Circuit TK3R3E03GL 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current (DC) (Silic.

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Datasheet Details

Part number TK3R3E03GL
Manufacturer Toshiba
File Size 432.53 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK3R3E03GL Datasheet

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TK3R3E03GL 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (3) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID =0.5 mA) 3. Packaging and Internal Circuit TK3R3E03GL 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.