TK39Z60X Datasheet Toshiba

Features and Benefits

(1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.9 mA) 3. Packaging and Internal Circuit TK39Z60X TO-247-4L(T) 1. Drain (.

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