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TK33S10N1H Datasheet, Toshiba

TK33S10N1H mosfet equivalent, silicon n-channel mosfet.

TK33S10N1H Avg. rating / M : 1.0 rating-12

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TK33S10N1H Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 .

Application


* Switching Voltage Regulators
* Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 8.2 mΩ .

Image gallery

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TAGS

TK33S10N1H
Silicon
N-Channel
MOSFET
Toshiba

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