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TK31V60W5 - Silicon N-Channel MOSFET

Key Features

  • (1) Fast reverse recovery time: trr = 135 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ. ) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31V60W5 DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless ot.

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Datasheet Details

Part number TK31V60W5
Manufacturer Toshiba
File Size 279.63 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK31V60W5 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trr = 135 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.087 Ω(typ.) (3) Easy to control Gate switching (4) Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31V60W5 DFN8x8 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 30.