TK2K2A60F Datasheet | Toshiba

Features (1) Easy to control Gate switching (2) Low drain-source on-resistance: RDS(ON) = 1.82 Ω (typ.) (3) Enhancement mode: Vth = 2 to 4 V (VDS = 10 V, ID = 0.35 m A) 3. Packaging and Internal Circuit 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25 ) (t = 1.0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS) TOR 600 ±30 3.5 14 30 78 3.5 3.5 14 150 -55 to 150 2000 0.6 V A W m J A  V Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ©2018 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-09 2018-09-25 Rev.2.0 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: VDD = 90 V, Tch = 25  (initial), L = 11.2 m H, IAS = 3.5 A Symbol Rth(ch-c) Rth(ch-a) Max Unit /W Note: This transistor is sensitive to electrostatic discharge and should be handled with...