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TK25N60X - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Dra.

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Datasheet Details

Part number TK25N60X
Manufacturer Toshiba
File Size 244.29 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK25N60X Datasheet

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MOSFETs Silicon N-Channel MOS (DTMOS-H) TK25N60X 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.105 Ω (typ.) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.2 mA) 3. Packaging and Internal Circuit TK25N60X 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4.