logo

TK22E10N1 Datasheet, Toshiba

TK22E10N1 mosfet equivalent, silicon n-channel mosfet.

TK22E10N1 Avg. rating / M : 1.0 rating-13

datasheet Download

TK22E10N1 Datasheet

Features and benefits

(1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0.

Application


* Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 11.5 mΩ (typ.) (VGS = 10 V).

Image gallery

TK22E10N1 Page 1 TK22E10N1 Page 2 TK22E10N1 Page 3

TAGS

TK22E10N1
Silicon
N-Channel
MOSFET
TK22A10N1
TK22A65X
TK22A65X5
Toshiba

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts