TK210V65Z - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

(1) Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK210V65Z DFN8x8 1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink) Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin. 4. Absolute Maximum Ratings (Note) (Ta = 25.
unless otherwise specif.

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