TK210V65Z
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.175 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 m A)
3. Packaging and Internal Circuit
DFN8x8
1: Gate 2: Source 1 3, 4: Source 2 5: Drain (heatsink)
Notice: Only use source 1 pin for gate input signal return. Please make sure that the main current flows into the source 2 pin.
4. Absolute Maximum Ratings (Note) (Ta = 25
- unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
Drain current (pulsed)
(Note 1)
Power dissipation
(Tc = 25
- )
Single-pulse avalanche energy
(Note 2)
165 m J
Single-pulse avalanche current
Reverse drain current (DC)
(Note 1)
Reverse drain current (pulsed) Channel temperature
(Note 1)
IDRP...
