TK20E60U mosfet equivalent, silicon n-channel mosfet.
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 100 µA (max) (V.
* Switching Voltage Regulators
2. Features
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.165 Ω (typ.).
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