TK190E65Z mosfet equivalent, silicon n-channel mosfet.
(1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V,.
* Switching Power Supplies
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ.) (2) High-speed s.
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