TK155A65Z - Silicon N-Channel MOSFET

Toshiba

Datasheet Details

MOSFETs Silicon N-Channel MOS (DTMOS) TK155A65Z 1.

Applications • Switching Power Supplies 2.

(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.73 mA) 3. Packaging and Internal Circuit TK155A65Z 1: Gate 2: Drain 3: Source TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse.