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TK11S10N1L - Silicon N-channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-07 2020-06-24 Rev.4.0 TK11S10N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless.

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Datasheet Details

Part number TK11S10N1L
Manufacturer Toshiba
File Size 431.99 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TK11S10N1L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-07 2020-06-24 Rev.4.0 TK11S10N1L 4.