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TK110N65Z - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110N65Z 1: Gate 2: Drain (heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Sin.

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Datasheet Details

Part number TK110N65Z
Manufacturer Toshiba
File Size 479.23 KB
Description Silicon N-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon N-Channel MOS (DTMOS) TK110N65Z 1. Applications • Switching Power Supplies 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ.) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110N65Z 1: Gate 2: Drain (heatsink) 3: Source TO-247 4.
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