TJ80S04M3L mosfet equivalent, silicon p-channel mosfet.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.0 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -.
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* Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators
2. Features
(1) (2) (3) .
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