･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts