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MICROWAVE POWER GaAs FET
TIM1213-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN
G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION
IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 7.0A f= 12.7 to 13.
TIM1213-30L Datasheet
