TEC9012 - Silicon PNP Transistor

Features

. High h FE : hFE=96 - 300 . 1W Output.

Toshiba

Datasheet Details

Part number	TEC9012
Manufacturer	Toshiba
File Size	73.96 KB
Description	Silicon PNP Transistor
Datasheet	TEC9012 Datasheet
Additional preview pages of the TEC9012 datasheet.

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Full PDF Text Transcription

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TEC9012 AUDIO POWER AMPLIFIER APPLICATIONS. FEATURES . High h FE : hFE=96 - 300 . 1W Output Applications . Complementary to TEC9013 5.1 MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC stg RATING -30 UNIT -25 -5 -800 mA 80 mA 625 mW 150 -55-150 JEDEC 1. EMITTER 2. BASE 3. COLLECTOR TOSHIBA 2-5F1F Weight : 0.

Published: Jun 9, 2024 |