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TC59SM808CMB - (TC59SM804CMB - TC59SM816CMB) SDRAM

Description

TC59SM816CMB/CMBL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CMB/CMBL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804CMB/CMBL is organized as 16,777,216 words × 4 banks × 4 bits.

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Datasheet Details

Part number TC59SM808CMB
Manufacturer Toshiba
File Size 2.79 MB
Description (TC59SM804CMB - TC59SM816CMB) SDRAM
Datasheet download datasheet TC59SM808CMB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TC59SM816/08/04CMB/CMBL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM816CMB/CMBL is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits and TC59SM808CMB/CMBL is organized as 8,388,608 words × 4 banks × 8 bits and The TC59SM804CMB/CMBL is organized as 16,777,216 words × 4 banks × 4 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second. These devices are controlled by commands setting.
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