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TC59SM708AFTL - (TC59SM704 - TC59SM716) SDRAM

Download the TC59SM708AFTL datasheet PDF. This datasheet also covers the TC59SM704 variant, as both devices belong to the same (tc59sm704 - tc59sm716) sdram family and are provided as variant models within a single manufacturer datasheet.

General Description

TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organized as 8,388,608 words × 4 banks × 4 bits.

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Note: The manufacturer provides a single datasheet file (TC59SM704_Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
TC59SM708AFT (TC59SM704 - TC59SM716) SDRAM
TC59SM708FT (TC59SM704FT - TC59SM716FT) SDRAM
TC59SM708FTL (TC59SM704FT - TC59SM716FT) SDRAM
TC59SM704AFT (TC59SM704 - TC59SM716) SDRAM
TC59SM704AFTL (TC59SM704 - TC59SM716) SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com TC59SM716/08/04AFT/AFTL-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59SM716AFT/AFTL is a CMOS synchronous dynamic random access memory organized as 2,097,152-words × 4 banks × 16 bits and TC59SM708AFT/AFTL is organized as 4,194,304 words × 4 banks × 8 bits and TC59SM704AFT/AFTL is organized as 8,388,608 words × 4 banks × 4 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 143M words per second. These devices are controlled by commands setting.