Datasheet4U Logo Datasheet4U.com

TC58FVM6B2AXB65 - 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY

Download the TC58FVM6B2AXB65 datasheet PDF. This datasheet also covers the TC58FVM62A variant, as both devices belong to the same 64mbit (8m x 8 bits/4m x 16 bits) cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits.

Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC58FVM62A_ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TC58FVM6B2AXB65
Manufacturer Toshiba
File Size 754.53 KB
Description 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
Datasheet download datasheet TC58FVM6B2AXB65 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TC58FV321 (TC58Fxxx) 32-MBIT (4M x 8 BITS / 2M x 16 BITS) CMOS FLASH MEMORY Toshiba Semiconductor
TC58FVB160A SILICON GATE CMOS Toshiba Semiconductor
TC58FVB400 4-MBIT CMOS FLASH MEMORY Toshiba Semiconductor
TC58FVT004 4M (512K x 8) BIT CMOS FLASH MEMORY Toshiba Semiconductor
TC58FVT160 16-MBIT CMOS FLASH MIMORY Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC58FVM6B2AFT65 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
TC58FVM6T2AFT65 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
TC58FVM6T2AXB65 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
TC58FVM7B2AFT65 128-MBIT (16M x 8 BITS / 8M x 16 BITS) CMOS FLASH MEMORY
TC58FVM7B2AFT80 128-MBIT (16M x 8 BITS / 8M x 16 BITS) CMOS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TC58FVM6(T/B)2A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • Power supply voltage • Block erase architecture VDD = 2.3 V~3.
Published: |