TC58DVM92A5TAI0
Description
The device is a single 3.3 V 512Mbit (553,648,128 bit) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
Key Features
- Organization Memory cell allay 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K +
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
- Power supply VCC = 2.7 V to 3.6 V
- Access time Cell array to register 25 μs max Serial Read Cycle 40 ns min
- Program/Erase time Auto Page Program 300 μs/page typ. Auto Block Erase 2.5 ms/block typ
- Operating current Read (40 ns cycle) Program (avg.) Erase (avg.) Standby 20 mA max. 20 mA max. 20 mA max. 50 μA max
