• Part: TC58DVG02A1FI0
  • Description: 1 Gbit (128M x *8its) CMOS NAND EPROM
  • Manufacturer: Toshiba
  • Size: 466.02 KB
Download TC58DVG02A1FI0 Datasheet PDF
Toshiba
TC58DVG02A1FI0
DESCRIPTION The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages). The TC58DVG02A1 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES - Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K +...