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TC58DVG02A1FI0 Datasheet

Manufacturer: Toshiba
TC58DVG02A1FI0 datasheet preview

Datasheet Details

Part number TC58DVG02A1FI0
Datasheet TC58DVG02A1FI0_Toshiba.pdf
File Size 466.02 KB
Manufacturer Toshiba
Description 1 Gbit (128M x *8its) CMOS NAND EPROM
TC58DVG02A1FI0 page 2 TC58DVG02A1FI0 page 3

TC58DVG02A1FI0 Overview

The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: The TC58DVG02A1 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for mand inputs.

TC58DVG02A1FI0 Key Features

  • Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Re
  • PIN ASSIGNMENT (TOP VIEW)
  • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devic
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