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TC571000D Datasheet, Toshiba

TC571000D mos equivalent, silicon stacked gate mos.

TC571000D Avg. rating / M : 1.0 rating-13

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TC571000D Datasheet

Features and benefits

with a maximum operating current of 30mA/ 5.0MHz and access time of 200ns/250ns. The programming times of the TC57l000D/TC57l00lD except overhead times of EPROM programme.

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TAGS

TC571000D
SILICON
STACKED
GATE
MOS
TC571000D-20
TC571000D-25
TC571001D
Toshiba

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