TC55B88J-12 Datasheet PDF - Toshiba SILICON GATE CMOS STATIC RAM Specs

TC55B88J-12 - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC55B88J-12, a member of the TC55B88P-10 SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC55B88P/J is a 65,536 bit high speed BiCMOS static random access memory organized as 8,192 words by 8 bits and operated from a single 5V supply.

Toshiba's BiCMOS technology and advanced circuit design enable hJgbspeed operation.

Features

low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B88P/J is suitable for use in high speed.

Datasheet Details

Part number	TC55B88J-12
Manufacturer	Toshiba
File Size	239.62 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC55B88J-12 Datasheet
Additional preview pages of the TC55B88J-12 datasheet.

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Full PDF Text Transcription

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TOSHIBA TC55B88P/J-10/12 SILICON GATE BiCMOS 8,192 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B88P/J is a 65,536 bit high speed BiCMOS static random access memory organized as 8,192 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable hJgb....speed operation. The TC55B88P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an output enable input (OE) for fast memory access. The TC55B88P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are TIL compatible. The TC55B88P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.

Published: Feb 20, 2017 |