TC554101J-20 Datasheet | Toshiba

TOSHIBA 112554101]-20/25/30 SILICON GATE CMOS 1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM PRELIMINARY Description The TC5541 01 J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable hi~peed operation. The TC5541 01 J Features low power dissipation when the device is deselected using chip enable (CE), and has an output enable input (OE) for fast memory access. The TC5541 01 J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and main memory. All inputs and outputs are TTL patible. The TC5541 01 J is available in a 400mil width, 36-pin SOJ suitable for high density surface assembly. Features - Fast access time - TC5541 01 J -20 20ns (max.) - TC5541 01 J -25 25ns (max.) - TC5541 01 J -30 30ns (max.) - Low power dissipation - TC5541 01 J -20 160mA (max.) - TC5541...