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TC55257BFTL-10LV Datasheet, Toshiba

TC55257BFTL-10LV ram equivalent, silicon gate cmos static ram.

TC55257BFTL-10LV Avg. rating / M : 1.0 rating-13

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TC55257BFTL-10LV Datasheet

Features and benefits

with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the stand.

Description

The TC55257BPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5.

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TAGS

TC55257BFTL-10LV
SILICON
GATE
CMOS
STATIC
RAM
TC55257BFTL-10L
TC55257BFTL-10LT
TC55257BFTL-10
Toshiba

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