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TC551664J-25 - SILICON GATE CMOS STATIC RAM

Download the TC551664J-25 datasheet PDF. This datasheet also covers the TC551664J-15 variant, as both devices belong to the same silicon gate cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply.

Toshiba's advanced CMOS technology and circuit design enable high speed operation.

Key Features

  • low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls. The TCS~)1664J is suitable for use in high speed.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC551664J-15-Toshiba.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
TC551664AJ 65536 Word x 16-Bit CMOS Static RAM Toshiba Semiconductor
TC551632J 32K Word x 16-Bit CMOS Static RAM Toshiba Semiconductor
TC5516A 2048 WORD x 8 BIT CMOS STATIC RAM Toshiba Semiconductor
TC5516AF 2048 WORD x 8 BIT CMOS STATIC RAM Toshiba Semiconductor
TC5516AF-2 2048 WORD x 8 BIT CMOS STATIC RAM Toshiba Semiconductor

Other Datasheets by Toshiba

Part Number Description
TC551664J-20 SILICON GATE CMOS STATIC RAM
TC551664J-15 SILICON GATE CMOS STATIC RAM
TC551632J-20 32K Word x 16-Bit CMOS Static RAM
TC551632J-25 32K Word x 16-Bit CMOS Static RAM
TC551632J-35 32K Word x 16-Bit CMOS Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA 11:551664]-15/20/25 SILICON GATE CMOS 65,536 WORD x 16 BIT CMOS STATIC RAM Description The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation. The I Uh1664,J features low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by upper and lower byte controls. The TCS~)1664J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and outputs are 11 L compatible.