TC551664J-25 ram equivalent, silicon gate cmos static ram.
low power dissipation when the device is deselected using chip enable (CE), and has an output Hf1alJle Input (OE:.1 fOt' fast memory access. Byte access is supported by u.
such as cache memory and high speed storage. All inputs and outputs are 11 L compatible.
The TC5E)1664,j is available in.
The TCEib 166L1-) is Gt 1,048,576 bit high speed CMOS static random access memory organized as 65,536 words by 16 bits and opemtfyj from a ~;ingle 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.
The I Uh1.
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