TC518129BFTL-10V
Description
The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.
Key Features
- A CS standby mode interface is incorporated in the TC518129B-V family, with the CE2 pin in the TC518128B-V family changed to a CS pin
- The TC518129B-V is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat
