TC518128BFWL-10V ram equivalent, silicon gate cmos pseudo static ram.
a static RAM-like interface with a
write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor
inter.
The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V
utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power stora.
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