TC511632FL-10 ram equivalent, silicon gate cmos pseudo static ram.
a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of WE thus simplifying the microprocessor interf.
The TC511632FUFTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FUFTL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power.
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