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TC511002Z-85 Datasheet DRAM

Manufacturer: Toshiba

Download the TC511002Z-85 datasheet PDF. This datasheet also includes the TC511002P-85 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC511002P-85-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC5ll002P/J/Z is the new generation dynamic RA}!

organized 1,048,576 words by 1 bit.

The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Overview

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0.

Key Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. "Test Mode" function is implemented from Revision C.

More Datasheets from Toshiba

Part Number Description
TC511002Z-10 DRAM
TC511002Z-12 DRAM
TC511002J-10 DRAM
TC511002J-12 DRAM
TC511002J-85 DRAM
TC511002P-10 DRAM
TC511002P-12 DRAM
TC511002P-85 DRAM
TC511000J-10 DRAM
TC511000J-12 DRAM