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TC511002P-10 - DRAM

Download the TC511002P-10 datasheet PDF. This datasheet also covers the TC511002P-85 variant, as both devices belong to the same dram family and are provided as variant models within a single manufacturer datasheet.

General Description

The TC5ll002P/J/Z is the new generation dynamic RA}!

organized 1,048,576 words by 1 bit.

The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Key Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. "Test Mode" function is implemented from Revision C.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TC511002P-85-Toshiba.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Toshiba

Part Number Description
TC511002P-12 DRAM
TC511002P-85 DRAM
TC511002J-10 DRAM
TC511002J-12 DRAM
TC511002J-85 DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS TC511002P/J/Z-85, TC511002P/J/Z-l0 TC511002P/J/Z-12 DESCRIPTION The TC5ll002P/J/Z is the new generation dynamic RA}! organized 1,048,576 words by 1 bit. The TC5ll002P/J/Z utilizes TOSHIBA's CXOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5ll002P/J/Z to be packaged in a standard 18 pin plastic DIP,.26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package size provides system bit densities and is compatible with ~videly available automated testing and insertion equipment.