TC190 Toshiba Datasheet

TC190 Key Features

• 707K usable gates up to 730K
• 14 standard master sizes 21 standard master sizes
• up to 512 wire bonds Same
• up to 776 TAB bond pads
• 62µ Inner lead bond pads Same
• Typical core power
• 2.63µW/gate/Mhz
• 180+ primitive cells Same (scan, standard, high drive cells)
• 450+ I/O cells including (hign drive Same {24mA} slew rate control high speed output buffers) piled cells
• sync/async Same single, dual, triple port RAM, ROM