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TBC556 - Silicon PNP Transistor

Key Features

  • . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3.

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Datasheet Details

Part number TBC556
Manufacturer Toshiba
File Size 50.94 KB
Description Silicon PNP Transistor
Datasheet download datasheet TBC556 Datasheet

Full PDF Text Transcription for TBC556 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TBC556. For precise diagrams, and layout, please refer to the original PDF.

SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC556 TBC557 TBC558 PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS. Unit in mm FEATURES . High VcEO . Low Noise -65...

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E OF AUDIO AMPLIFIERS. Unit in mm FEATURES . High VcEO . Low Noise -65V (TBC556) -45V (TBC557) -30V (TBC558) 0.45 11 1.27 1.27 H^fj/ X 3 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC556 TBC557 TBC558 Collector-Emitter Breakdown Voltage TBC556 TBC557 TBC558 Emitter-Base Breakdown Voltage SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0 RATING -80 -50 -30 -65 -45 -30 UNIT 1. COLLECTOR 2. BASE 3. EMITTER TOSHIBA 2-5P1Q Weight : 0.

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