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TB67S112PG - Parallel controlled solenoid driver

General Description

Pin description of pin No.

1 to 16.

Pin No.

Key Features

  • BiCD integrated circuit silicon monolithic. Capable of driving up to two solenoids simultaneously. (2-ch sink driver) Capable of driving a unipolar stepping motor with two chips. Built-in over current detection (automatic return / time control) at each output. Built-in thermal shutdown detection (automatic return / time control), which detects errors of the whole device. Built-in output MOSFET for low ON resistance (0.3 Ω (typ. )). High voltage and large current (Refer to “Absolute maximum.

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Datasheet Details

Part number TB67S112PG
Manufacturer Toshiba
File Size 344.01 KB
Description Parallel controlled solenoid driver
Datasheet download datasheet TB67S112PG Datasheet

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Other Datasheets by Toshiba

Part Number Description
TB67S111PG Full parallel controlled solenoid driver / unipolar motor driver
TB67S101AFG PHASE-in controlled Bipolar Stepping Motor Driver
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TB67S101AFTG PHASE-in controlled Bipolar Stepping Motor Driver
TB67S101ANG PHASE-in controlled Bipolar Stepping Motor Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TB67S112PG TOSHIBA BiCD Process Integrated Circuit Silicon Monolithic TB67S112PG Parallel controlled solenoid driver The TB67S112PG is a solenoid driver for parallel input. Using the BiCD process, the output voltage of 50 V, and the output current of 1.5 A/ch (absolute maximum rating) are realized. Weight: 1.11 g (typ.) Features BiCD integrated circuit silicon monolithic. Capable of driving up to two solenoids simultaneously. (2-ch sink driver) Capable of driving a unipolar stepping motor with two chips. Built-in over current detection (automatic return / time control) at each output. Built-in thermal shutdown detection (automatic return / time control), which detects errors of the whole device. Built-in output MOSFET for low ON resistance (0.3 Ω (typ.)).