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SSM6N815R - Silicon N-Channel MOSFET

Key Features

  • (1) 4.0 V drive (2) Low drain-source on-resistance : RDS(ON) = 115 mΩ (typ. ) (@VGS = 4.0 V) RDS(ON) = 101 mΩ (typ. ) (@VGS = 4.5 V) RDS(ON) = 84 mΩ (typ. ) (@VGS = 10 V) 3. Packaging and Pin Assignment TSOP6F SSM6N815R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-09 2017-08-29 Rev.1.0 SSM6N815R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) (Q1,Q2 Commo.

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Datasheet Details

Part number SSM6N815R
Manufacturer Toshiba
File Size 429.14 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6N815R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM6N815R 1. Applications • Power Management Switches 2. Features (1) 4.0 V drive (2) Low drain-source on-resistance : RDS(ON) = 115 mΩ (typ.) (@VGS = 4.0 V) RDS(ON) = 101 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 84 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment TSOP6F SSM6N815R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-09 2017-08-29 Rev.1.0 SSM6N815R 4.