SSM6N7002CFU Datasheet Toshiba

Features and Benefits

(1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assignment US6 SSM6N7002CFU 1. Source1 2. Gate1 3. Dra.