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Toshiba Electronic Components Datasheet

SSM6J801R Datasheet

Silicon P-Channel MOSFET

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MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J801R
1. Applications
• Power Management Switches
2. Features
(1) 1.5 V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 88.4 m(max) (@VGS = -1.5 V)
RDS(ON) = 56.0 m(max) (@VGS = -1.8 V)
RDS(ON) = 39.7 m(max) (@VGS = -2.5 V)
RDS(ON) = 32.5 m(max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
TSOP6F
SSM6J801R
1, 2, 5, 6: Drain
3: Gate
4: Source
©2016 Toshiba Corporation
1
Start of commercial production
2016-10
2016-12-19
Rev.3.0


Toshiba Electronic Components Datasheet

SSM6J801R Datasheet

Silicon P-Channel MOSFET

No Preview Available !

SSM6J801R
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS -20 V
Gate-source voltage
VGSS
-8/+6
Drain current (DC)
Drain current (pulsed)
(Note 1)
(Note 1), (Note 2)
ID
IDP
-6.0
-24.0
A
Power dissipation
(Note 3)
PD
1.5 W
Power dissipation
t = 10 s
(Note 3)
3.0
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: Pulse width (PW) 10 µs, duty 1 %
Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645 mm2)
Note:
Note:
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables,
operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to
the board material, board area, board thickness and pad area. When using this device, be sure to take heat
dissipation fully into account.
©2016 Toshiba Corporation
2
2016-12-19
Rev.3.0


Part Number SSM6J801R
Description Silicon P-Channel MOSFET
Maker Toshiba
Total Page 9 Pages
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