SSM6J801R
SSM6J801R is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Power Management Switches
2. Features
(1) 1.5 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 88.4 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 56.0 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 39.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.5 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
TSOP6F
1, 2, 5, 6: Drain 3: Gate 4: Source
©2016 Toshiba Corporation
Start of mercial production
2016-10
2016-12-19 Rev.3.0
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