SSM3K7002CFU Datasheet, Toshiba

(1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 m.

* High-Speed Switching 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON).

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SSM3K7002KF

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