SSM3K56ACT mosfet equivalent, silicon n-channel mosfet.
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 235 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 300 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 480 mΩ (max) (@VG.
* High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 235 .
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