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SSM3K35AFS - Silicon N-Channel MOSFET

Features

  • (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment SSM SSM3K35AFS 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2017-02-17 Rev.3.0 SSM3K35AFS 4. Absolute Maximum Ra.

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Datasheet Details

Part number SSM3K35AFS
Manufacturer Toshiba
File Size 221.65 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K35AFS Datasheet

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Full PDF Text Transcription (Reference)

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MOSFETs Silicon N-Channel MOS SSM3K35AFS 1. Applications • High-Speed Switching • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment SSM SSM3K35AFS 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2017-02-17 Rev.3.0 SSM3K35AFS 4.
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