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SSM3J56ACT - Silicon P-Channel MOSFET

Key Features

  • (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Assignment CST3 SSM3J56ACT 1: Gate 2: Source 3: Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.3.0 SSM3J56ACT 4. Absolute Maximum Ratings (Note) (Un.

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Datasheet Details

Part number SSM3J56ACT
Manufacturer Toshiba
File Size 305.26 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J56ACT Datasheet

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MOSFETs Silicon P-Channel MOS SSM3J56ACT 1. Applications • High-Speed Switching 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Assignment CST3 SSM3J56ACT 1: Gate 2: Source 3: Drain ©2015-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-11 2022-11-25 Rev.3.0 SSM3J56ACT 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±8 Drain current (DC) (Note 1) ID -1.