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SSM3J326T Toshiba

SSM3J326T Silicon P-Channel MOSFET

SSM3J326T Avg. rating / M : star-12

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SSM3J326T Datasheet

Application

• 1.8-V drive • Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (.

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SSM3J326T SSM3J326T SSM3J326T

TAGS
SSM3J326T
Silicon
P-Channel
MOSFET
SSM3J321T
SSM3J325F
SSM3J327F
Toshiba

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