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SSM3J145TU - Silicon P-Channel MOSFET

Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SSM3J145TU 1. Gate 2. Source 3. Drain UFM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J145TU,LF SSM3J145TU,LXGF SSM3J145TU,LXHF.
  • YES YES (Not.

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Datasheet Details

Part number SSM3J145TU
Manufacturer Toshiba
File Size 270.05 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J145TU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J145TU 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance RDS(ON) = 260 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 180 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 132 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SSM3J145TU 1. Gate 2. Source 3. Drain UFM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J145TU,LF SSM3J145TU,LXGF SSM3J145TU,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.
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