RN1132MFV Datasheet | Toshiba

RN1131MFV, RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1131MFV, RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Unit: mm - Ultra-small package, suited to very high density mounting - Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more pact equipment and lowering assembly cost. - A wide range of resistor values is available for use in various circuits. - plementary to the RN2131MFV, RN2132MFV Equivalent Circuit 1.BASE VESM 2.EMITTER 3.COLLECTOR JEDEC JEITA TOSHIBA ― ― 1-1Q1S Weight: 1.5 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol Rating Unit VCBO VCEO VEBO 100 m A PC (Note1) 150 m W Tj °C Tstg - 55 to 150 °C Land Pattern Dimensions (for reference only) Unit:...